C, H, N and O in Si and Characterization and Simulation of Materials and Processes

(Please contact the publisher for a complete list of contents). Part I: Symposium N on Carbon, Hydrogen, Nitrogen and Exygen in Silicon and Other Element Semiconductors. Selection of papers: Light impurities and their interactions in silicon (R.C. Newman). Effect of nitrogen contamination by cucible encapsulation on polycrystalline silicon material quality (S. Binetti et al.). Effect of native point defects on morphology of gettering centres in CZ-silicon wafers (K.L. Enisherlova et al.). Oxygen related defects in germanium (P. Clauws). The effect of carbon on diffusion in silicon (P.A. Stolk et al.). Part II: Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes. Selection of papers: Simulations of thin film deposition from atomic and cluster beams (G.H. Gilmer et al.). Computational materials design and processing: perspectives for atomistic approaches (E. Wimmer). Grain boundary sliding: an ab initio simulation (C. Molteni et al.). Binding and diffusion of an A1 adatom on the hydrogen-terminated Si(100) surface (Y. Tanida, M. Ikeda). Quantum chemical simulations of the optical properties and diffusion of electron centres in MgO crystals (E.A. Kotomin et al.). Author index. Subject index.